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| Silicon Schottky Diodes q q BAT 68 ... For mixer applications in the VHF/UHF range For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 68 BAT 68-04 Marking 83 84 Ordering Code Pin Configuration (tape and reel) Q62702-A926 Q62702-A4 Package1) SOT-23 BAT 68-05 85 Q62702-A15 BAT 68-06 86 Q62702-A19 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 02.96 BAT 68 ... q q For mixer applications in the VHF/UHF range For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 68-07 Marking 87 Ordering Code Pin Configuration (tape and reel) Q62702-A44 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Power dissipation, TS 60 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF Ptot Tj Tstg Values 8 130 150 150 - 55 ... + 150 Unit V mA mW C 750 590 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 2 BAT 68 ... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 10 A Reverse current VR = 1 V VR = 1 V, TA = 60 C Forward voltage 1) IF = 1 mA IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min. VBR IR - - VF - - CT rf - - - - - - 340 500 1 10 pF - - 0.1 1.2 mV 8 Values typ. - max. - V A Unit 1) Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, VF = 20 mV max. Semiconductor Group 3 BAT 68 ... Forward current IF = f (VF) Forward current IF = f (TS, TA*) *Package mounted on alumina BAT 68-04, -05, -06, -07 Forward current IF = f (TS; TA*) *Package mounted on alumina BAT 68 Reverse current IR = f (VR) Semiconductor Group 4 BAT 68 ... Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance rf = f (IF) f = 10 kHz Semiconductor Group 5 |
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